Semiconductor switching device with different local cell geometry

ABSTRACT

A semiconductor device includes a semiconductor substrate having an outer rim, a plurality of switchable cells defining an active area, and an edge termination region arranged between the switchable cells defining the active area and the outer rim. Each of the switchable cells includes a body region, a gate electrode structure and a source region. A source metallization is in ohmic contact with the source regions of the switchable cells. A gate metallization is in ohmic contact with the gate electrode structures of the switchable cells. The active area defined by the switchable cells includes at least a first switchable region having a specific gate-drain capacitance which is different to a specific gate-drain capacitance of a second switchable region.

TECHNICAL FIELD

Embodiments described herein relate to semiconductor devices and inparticular to semiconductor switching devices such as semiconductorpower switches having different local cell geometry, and particularly alocally different gate-drain capacitance. Furthermore, embodimentsdescribed herein relate to a cell layout of switchable cells located inan active area of the semiconductor device.

BACKGROUND

Semiconductor switching devices having large chip area are provided withgate signal emitters or gate runner structures such as gate pads, gaterings, or gate fingers for transferring an external switching signalprovided by external circuitry to an ensemble of switchable cellsarranged in an active area of the semiconductor switching device.

Cells located at or in the proximity of an outer rim of the chip areawhere the gate metallization such as the gate runner structure islocated can receive an external switching signal at a time before theexternal switching signal can reach switchable cells located in an innerregion of the chip area. In particular, if a transient switching signalfor a short duration occurs, only those cells close to gate signalemitters are addressed, and thus switched. The cells close to the gatesignal emitters must therefore carry the full load current which canresult in a current per cell higher than the rated current. Furthermore,this kind of inhomogeneous distribution of the external switching signalacross the chip area can prevent the switchable cells from switchingconcurrently. Simultaneous operation of the switchable cells is thus notensured and inhomogeneous switching can occur.

In view of the above, there is a need for improvement.

SUMMARY

According to an embodiment, a semiconductor device includes asemiconductor substrate having an outer rim, a plurality of switchablecells defining an active area, and an edge termination region arrangedbetween the switchable cells defining the active area and the outer rim.Each of the switchable cells includes a body region, a gate electrodestructure and a source region. A source metallization is in ohmiccontact with the source regions of the switchable cells. A gatemetallization is in ohmic contact with the gate electrode structures ofthe switchable cells. The active area defined by the switchable cellsincludes at least a first switchable region having a specific gate-draincapacitance which is different to a specific gate-drain capacitance of asecond switchable region.

According to an embodiment, a semiconductor device includes asemiconductor substrate having an outer rim, a plurality of switchablecells defining an active area, and an edge termination region arrangedbetween the switchable cells defining the active area and the outer rim.Each of the switchable cells includes a body region, a gate electrodestructure and a source region. A source metallization is in ohmiccontact with the source regions of the switchable cells. A gatemetallization is in ohmic contact with the gate electrode structures ofthe switchable cells. The active area defined by the switchable cellsincludes at least a first switchable region and at least a secondswitchable region different to the first switchable region, wherein eachswitchable cell in the first switchable region and the second switchableregion has a specific coverage ratio, wherein the specific coverageratio of the switchable cells in the first switchable region isdifferent to the specific coverage ratio of the switchable cells in thesecond switchable region.

According to an embodiment, a method for manufacturing a semiconductordevice includes: providing a semiconductor substrate having an outerrim, an active area, and an edge termination region arranged between theactive area and the outer rim; forming a plurality of switchable cellsin the active area, wherein each of the switchable cells includes a bodyregion, a gate electrode structure, and a source region, wherein theactive area defined by the switchable cells includes at least a firstswitchable region having a specific gate-drain capacitance which isdifferent to a specific gate-drain capacitance of a second switchableregion; forming a source metallization in ohmic contact with the sourceregions of the switchable cells; and forming a gate metallization inohmic contact with the gate electrode structures of the switchablecells.

Those skilled in the art will recognize additional features andadvantages upon reading the following detailed description, and uponviewing the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The components in the figures are not necessarily to scale, insteademphasis being placed upon illustrating the principles of the invention.Moreover, in the figures, like reference numerals designatecorresponding parts.

FIG. 1 illustrates a semiconductor switching device having a mainswitchable region which is surrounded by an edge termination region,according to an embodiment.

FIG. 2 illustrates a semiconductor switching device having a firstswitchable region and a second switchable region arranged between thefirst switchable region and the edge termination region, according to anembodiment.

FIG. 3 illustrates a semiconductor switching device provided in asemiconductor substrate, wherein the gate metallization includes gatefingers, according to yet another embodiment.

FIG. 4 is a schematic drawing of the semiconductor switching deviceshown in FIG. 3, wherein a second switchable region is provided close tothe gate metallization, according to yet another embodiment.

FIG. 5 is a schematic view of a layout of a switchable cell at or nearof the edge termination region, according to an embodiment.

FIG. 6 is a schematic view of a layout of a switchable cell in atransition region between a first switchable region and a secondswitchable region, according to another embodiment.

FIG. 7 illustrates details of a layout of a switchable cell in thetransition region, according to yet another embodiment.

FIG. 8 illustrates different layout of switchable cells in the first andsecond switchable region according to yet another embodiment.

FIG. 9A is a side-sectional view of a portion of an array of switchablecells, according to an embodiment.

FIG. 9B is a side-sectional view of a portion of an array of switchablecells, according to another embodiment.

FIG. 10 illustrates a semiconductor switching device having a firstswitchable region and a second switchable region arranged between thefirst switchable region and an edge termination region, according toanother embodiment.

FIG. 11 illustrates a semiconductor switching device having a firstswitchable region, a second switchable region, a third switchableregion, and a fourth switchable region, according to yet anotherembodiment.

FIG. 12 illustrates the effect of the locally adapted gate-draincapacitance, according to an embodiment.

DETAILED DESCRIPTION

In the following Detailed Description, reference is made to theaccompanying drawings, which form a part hereof, and in which are shownby way of illustration specific embodiments in which the invention canbe practiced. In this regard, directional terminology, such as “top,”“bottom,” “front,” “back,” leading,” “trailing,” “lateral,” “vertical,”etc., is used with reference to the orientation of the Figure(s) beingdescribed. Because components of embodiments can be positioned in anumber of different orientations, the directional terminology is usedfor purpose of illustration and is in no way limiting. It is to beunderstood that other embodiments can be utilised and structural orlogical changes can be made without departing from the scope of thepresent invention. The following detailed description, therefore, is notto be taken in a limiting sense, and the scope of the present inventionis defined by the appended claims. The embodiments being described usespecific language, which should not be construed as limiting the scopeof the appended claims.

Reference will now be made in detail to various embodiments, one or moreexamples of which are illustrated in the figures. Each example isprovided by way of explanation, and is not meant as a limitation of theinvention. For example, features illustrated or described as part of oneembodiment can be used on or in conjunction with other embodiments toyield yet a further embodiment. It is intended that the presentinvention includes such modifications and variations. The examples aredescribed using specific language which should not be construed aslimiting the scope of the appending claims. The drawings are not scaledand are for illustrative purposes only. For clarity, the same elementsor manufacturing steps have been designated by the same references inthe different drawings if not stated otherwise.

In this specification, a second surface of a semiconductor substrate isconsidered to be formed by the lower or back-side surface while a firstsurface is considered to be formed by the upper, front or main surfaceof the semiconductor substrate. The terms “above” and “below” as used inthis specification therefore describe a relative location of astructural feature to another structural feature with consideration ofthis orientation.

In the context of the present specification, the term “MOS”(metal-oxide-semiconductor) should be understood as including the moregeneral term “MIS” (metal-insulator-semiconductor). For example, theterm MOSFET (metal-oxide-semiconductor field-effect transistor) shouldbe understood to also include FETs having a gate insulator that is notan oxide, i.e. the term MOSFET is used in the more general term meaningof IGFET (insulated-gate field-effect transistor) and MISFET(metal-insulator-semiconductor field-effect transistor), respectively.The term “metal” for the gate material of the MOSFET should beunderstood to include electrically conductive materials such as, but notrestricted to, metal, alloys, doped polycrystalline semiconductors andmetal semiconductor compounds such as metal silicides.

Field-effect controlled switching devices such as Metal OxideSemiconductor Field-effect Transistors (MOSFETs) or Insulated GateBipolar Transistors (IGBTs) have been used for various applications,including use as switches in power supplies and power converters,electric cars, air-conditioners, and even stereo systems. Particularlywith regard to power devices capable of switching large currents and/oroperating at higher voltages, a low resistance in the conductingon-state is often desired. This means e.g. that, for a given current tobe switched, the voltage drop across the switched-on FET, e.g., thesource-drain voltage is desired to be low. On the other hand, the lossesoccurring during switching off or commutating of the FET are often alsoto be kept small to minimize the overall losses.

The term “semiconductor power switch” as used in this specificationdescribes a semiconductor device on a single chip with high voltageand/or high current switching capabilities. In other words, powersemiconductor devices are intended for high current, typically in theAmpere range. Within this specification the terms “semiconductor powerswitch,” “semiconductor switching device,” and “power semiconductordevice” are used synonymously.

In the context of the present specification, the term “active cellregion” or “active area” describes a region of a semiconductor substrateof the semiconductor switching device where switchable cells which carrythe load current are arranged. The switchable cells in the active areadefine the switching behavior of the semiconductor switching device.Specifically, an active area can include at least a main or firstswitchable region and a second switchable region, optionally more thantwo different switchable regions. Switchable cells in differentswitchable regions can differ from each other in at least one physicalproperty such as the gate-drain capacitance or the threshold voltage.The cells can also have a different cell layout in different switchableregions of the active area. The different switchable regions of theactive area are also referred to as “sub-regions” of the active area anddescribe regions having switchable cells, or portions of switchablecells, with physical properties which are different to the physicalproperties of switchable cells of other sub-regions. In particular,different sub-regions can be manufactured with different gatepolysilicon coverage such that the local gate-drain capacitance Cgd,e.g. a capacitance of an individual cell or a group of individual cells,varies.

In the context of the present specification, the term “cell pitch” or“longitudinal pitch” describes the pitch of the switchable cells in theactive area along the longitudinal extension of the switchable cells.

In the context of the present specification, the term “gate electrodestructure” describes a conductive structure which is arranged next to,and insulated from the semiconductor substrate by a dielectric region ordielectric layer. The gate electrode structure covers, when seen ontothe surface of the semiconductor substrate, different regions of thesemiconductor device such as body regions and drift regions. The gateelectrode structure includes the gate electrodes of the switchable cellsnext to the body regions and also electrical connections betweenadjacent gate electrodes which are electrically connected with eachother. The gate electrodes are configured to form and/or control theconductivity of a channel region in the body region, for example by theelectric-field-mediated formation of an “inversion channel” in the bodyregions between the respective source regions and drift regions of theswitchable cells. When forming an inversion channel, the conductivitytype of the channel region is typically changed, i.e., inverted, to forman unipolar current path between the source and the drain region. Thegate electrode structure is often conveniently referred to as gatepolysilicon.

Examples of dielectric materials for forming a dielectric region ordielectric layer between the gate electrode and the body region include,without being limited thereto, silicon oxide (SiO₂), silicon nitride(Si₃N₄), silicon oxinitride (SiO_(x)N_(y)), zirconium oxide (ZrO₂),tantalum oxide (Ta₂O₅), titanium oxide (TiO₂) and hafnium oxide (HfO₂),and combinations thereof including stacks of different insulatingmaterials.

The terms “electrical connection” and “electrically connected” describesan ohmic connection between two elements.

In the context of the present specification, the term “gate signalemitter” describes an electrode configuration which provides transfer ofexternal switching signals to the gate electrode structure of theswitchable cells. Within this specification the terms “gatemetallization” and “gate signal emitter” are used synonymously.Typically, the gate metallization is formed on the gate electrodestructure to improve distribution of the switching signal. For example,the gate electrode structure is formed by polysilicon and can have anet-like structure covering the active area while the gate metallizationis formed on and in ohmic contact with the gate electrode structure inthe periphery of the semiconductor device, for example, in the edgetermination area. The gate metallization can include, for example, agate ring, or a gate ring and gate fingers extending from the gate ringinto the active area. The net-like structure of the gate electrodestructure includes openings for source contacts. Gate signal emitterstypically have a lower specific resistance than the gate electrodestructure. For example, gate signal emitters can be made of moreconductive material than the gate electrode structure and/or can be madethicker than the gate electrode structure to reduce the resistance.

In this specification, n-doped is referred to as first conductivity typewhile p-doped is referred to as second conductivity type. Alternatively,the semiconductor devices can be formed with opposite doping relationsso that the first conductivity type can be p-doped and the secondconductivity type can be n-doped. Furthermore, some Figures illustraterelative doping concentrations by indicating “−” or “+” next to thedoping type. For example, “n⁻” means a doping concentration which isless than the doping concentration of an “n”-doping region while an“n⁺”-doping region has a larger doping concentration than the “n”-dopingregion. However, indicating the relative doping concentration does notmean that doping regions of the same relative doping concentration haveto have the same absolute doping concentration unless otherwise stated.For example, two different n⁺-doping regions can have different absolutedoping concentrations. The same applies, for example, to an n⁺-dopingand a p⁺-doping region.

In the context of the present specification, the term “gate-draincapacitance”\describes a capacitance formed between the gate electrodestructure and the drain region of an individual switchable cell.Specifically, the gate-drain capacitance Cgd can be dependent on thespecific coverage ratio of the gate electrode structure in the activearea. If designed with different geometry, switchable cells located atan outer chip area of the active area can have a larger gate-draincapacitance as compared to the gate-drain capacitance of switchablecells located in a more central area of the active area. The gate-draincapacitance of a switchable cell can be influenced by the gate connectedpolysilicon coverage at a position of the cell.

In the context of the present specification, the term “specific coverageratio” describes a specific ratio between an area covered by a gateelectrode structure in a given region (unit area) and the total area ofthe given region (unit area). The unit area can be, for example, thearea of a single switchable cell. In this case, the specific coverageratio is defined by the ratio of the area of the gate electrodestructure of said cell to the total area of said switchable cell. Thespecific coverage ratio influences the gate-drain capacitance.Typically, the higher the specific coverage ratio, the higher thegate-drain capacitance for the given region. The given region, however,does not need to correspond to a single switchable cell. The coverage ofthe gate electrode structure is often referred to as gate polysiliconcoverage.

In particular, the specific coverage ratio can be different forswitchable cells located in regions of the active area which are locatedcloser to a gate metallization of the semiconductor device as comparedto switchable cells located in regions of the active area which arelocated further away from the gate metallization.

When describing switchable cells to be closer to the gate metallization,this can refer either to a geometrical distance of the respectiveswitchable cell to the gate metallization, or to the electrical value ofthe gate resistance that this switchable cell has. For example, thecloser the switchable cell is arranged to the gate metallization, thelower is its gate resistance. As the resistance of the gate structurealso varies depending on the layout of the switchable cells arrangedbetween the gate metallization and a particular switchable cell, thegate resistance of two specific switchable cells can be different evenwhen both have the same geometrical distance to the gate metallization.Therefore, “closer to the gate metallization” describes, when using thepicture of electrical resistance, that a particular switchable cell hasa lower gate resistance than another particular switchable cell.

With reference to FIG. 1, a first embodiment of a semiconductorswitching device 300 having a plurality of switchable cells 101 providedin a semiconductor substrate 301 is described. The semiconductorswitching device 300 has an active area 10 with a main or firstswitchable region 100 which is surrounded by an edge termination region600.

The semiconductor substrate 301 includes an outer rim 604, the activearea 10, and the edge termination region 600 arranged between the activearea 10 and the outer rim 604. The switchable cells 101 are arrangedwithin and define the active area 10. Each of the switchable cells 101can include a gate electrode structure and a source region. Furthermore,a source metallization is provided which is in ohmic contact with thesource regions of the switchable cells 101 through respective sourcecontacts or plugs which extends through openings in the gate electrodestructure. Furthermore, each switchable cell 101 includes a body regionin which an inversion channel can be formed and/or controlled by thevoltage applied to the gate electrodes.

In the edge termination region 600, inactive cells 201 are located. Theinactive cells 201 are not switchable or are not capable of carrying aload current. Although the inactive cells 201 do not contribute to theload current, they are formed for process reasons and to facilitate thevoltage relief in the edge termination area 600.

In situations with high d(Vds)/dt, with Vds being the drain-sourcevoltage, or in case of commutation of the body diode there is a large(hole-) current contribution from the edge termination region 600. Thecells close to the edge termination region 600 collect this current. Ifthe large hole-current is flowing along a n-doped source region, it cantrigger the emission of electrons from the n-region into the p-dopedbody-region. Such an emission would lead to extreme high currents and todestruction of the device. In order to prevent this, the cells at theouter boundary of the active area 10 are often designed without n-dopedsource-regions so that they cannot contribute to the load current.Hence, these cells 201 are “inactive”.

A gate metallization 305 is formed in this embodiment in regions outsidethe active area 10 and includes a gate ring or gate runner 304 and agate pad 302. According to a further embodiment, the gate pad 302 isarranged at least partially or completely in the active area 10. Thegate runner 304 typically runs outside of the active area 10 and canpartially extend into the active area 10 to form a good ohmic contactwith the gate pad 302. According to another embodiment, the gatemetallization 305 only includes a gate pad 302 which can be arrangedeither in the active area 10, outside of the active area 10, for exampleat least partially in the edge termination area, or can extend from theedge termination area 600 to the active area 10.

Semiconductor switching devices can include, but are not restricted to,MOS (metal-oxide-semiconductor) transistors such as MIS(metal-insulator-semiconductor) devices. Accordingly, a MOSFET(metal-oxide-semiconductor field-effect transistor) can include a gateinsulator, e.g. an oxide. The gate metallization 305 can include a gaterunner structure or gate ring, a gate pad, a gate finger, or anycombinations thereof. The gate electrode structure can include highlydoped polysilicon. The gate metallization 305 can include at least oneof a metal, a metal alloy, and a metal layer stack. According to yet afurther modification, the gate metallization 305 can have a higherspecific conductivity than the gate electrode structure.

A semiconductor switching device provided on a single chip can have highvoltage and/or high current switching capabilities, resulting from thelayout of the individual switchable cells 101 and the combination of theswitching processes of an ensemble of switchable cells 101 formed in thesemiconductor chip. Thereby, such semiconductor power switches can beused in many applications if the switching behavior of the individualswitchable cells can be controlled efficiently.

Inhomogeneous switching can particularly occur for short-duration orshort switching processes where predominantly those switchable cellsclose to gate signal emitters, e.g. close to gate metallizationstructures are switched. For example, a parasitic current at a gate of aswitchable cell resulting from a fast change of a drain-source voltagecan generate a short-duration voltage increase at the gate. Agate-source voltage Vgs can amount to a value given by the followingequation (1).Vgs≈Rg*Cgd*dV/dt,  (1)wherein Rg is the gate resistance, Cgd is the local gate-draincapacitance, and dV/dt is the voltage change rate. As described above,the gate electrode structure not only forms the actual gate electrodesbut also the electrical connection to the gate metallization todistribute the gate signal. Since the gate electrode structure has agiven specific resistance (Ω/mm²), the resistance Rg, which is mainlydefined by the gate electrode structure, is higher for switchable cells101 which are more remote from the gate metallization 305 than forswitchable cells 101 which are arranged closer to the gate metallization305 due to the larger distance from the gate metallization 305. Undercertain circumstances, e.g. in an avalanche mode, the different gateresistance Rg renders switchable cells 101 conductive at differentpoints in time so that during this transition time the entire currentthrough the semiconductor device is carried by few switchable cells 101which were already rendered conductive. This can result in a localoverstress of these switchable cells 101. Typically, switchable cells101 in regions near the gate metallization 305 or edge terminationregion 600 are rendered conductive first and must therefore carryapproximately the entire switching current whereas switchable cells 101in a more central switchable region of the active area 10 are not or notcompletely switched, or switched at a later time. This non-uniformbehavior is sometimes referred to as current splitting or formation ofcurrent filaments. Formation of current filaments stresses the involvedswitchable cells and can render the device inoperable.

According to embodiments which can be combined with other embodimentsdescribed herein, physical properties of the switchable cells locatednear the edge termination region 600 and the gate signal emitters 305can differ from physical properties of the switchable cells 101 locatedmore centrally in the active area 10. Such modification is used to atleast partially compensate for the inhomogeneous gate signalpenetration. Typically, the switching of switchable cells 101 which arearranged closer to the gate signal emitters 305 are retarded so that thegate signal can penetrate deeper into the active area 10 before theswitchable cells 101 close to the gate signal emitter 305 becomeconductive. This increases the number of switchable cells 101 which areturned on (become conductive) during the short period of time defined bya short period switching signal. Local overstress in the region of theswitchable cells 101 rendered conductive can be avoided or at leastreduced.

According to an embodiment, the locally varying physical property is thegate-drain capacitance. The gate electrode structure of switchable cells101 which are arranged closer to the gate metallization 305 can have acell layout which is different to the cell layout of the gate electrodestructure of switchable cells 101 which are arranged further away fromthe gate metallization 305. For example, the specific coverage ratio ofswitchable cells 101 which are arranged closer to the gate metallization305 can be larger than the specific coverage ratio of switchable cells101 which are arranged further away from the gate metallization 305.Typically, by changing the cell layout such as the cell size or pitch,the specific coverage ratio can be adapted.

According to embodiments which can be combined with other embodimentsdescribed herein, the active region 10 of switchable cells 101 can bedivided in different sub-regions or different switchable regions withdifferent specific coverage ratio such that the local gate-draincapacitance Cgd, e.g. the capacitance of an individual cell or a groupof individual cells, is adjusted. It is noted here that an overallgate-drain capacitance Cgd_total of the entire semiconductor switchingdevice 300 can be represented as a weighted sum of all individualgate-drain capacitances Cgd of involved switchable cells. Thereby,tailoring of the overall gate-drain capacitance Cgd_total can beadjusted, for example, by adapting the size of the area which is coveredby the gate structures of an individual switchable cell, as thisinfluences the local gate-drain capacitance Cgd of this specificswitchable cell. Alternatively or in addition, the cell layout such asthe longitudinal pitch can be varied.

According to an embodiment which can be combined with other embodimentsdescribed herein, the structure of the active area 10 or activeswitchable region can be designed such that the gate-drain capacitancesCgd of switchable cells 101 continuously decrease from a sub-region ofthe active area 10 close to the gate metallization 101 to a centerregion of the active area 10 further away from the gate metallization305. According to another embodiment which can be combined with otherembodiments described herein, the active area 10 can be designed suchthat the gate-drain capacitances Cgd of switchable cells 101 decreasestep-wise from a sub-region of the active area 10 close to the gatemetallization 305 to a center region of the active area 10 further awayfrom the gate metallization 305.

The gate metallization 305 for transferring switching signals from agate driver circuitry to the switchable cells 101 can be formed in theedge termination region 600. The gate metallization 305 is in ohmiccontact with the gate electrode structures of the switchable cells 101.The gate metallization 305 can include a gate ring 304 provided in theouter region of the semiconductor substrate 301, and a gate pad 302.Gate rings 304 are used particularly for large area semiconductordevices having a plurality of switchable cells 101 to connectelectrically the gate electrode structures of all switchable cells 101with a common gate pad structure.

Switchable cells 101 located closer to the gate metallization 305, e.g.switchable cells 101 located near the edge termination region 600, canhave a gate-drain capacitance Cgd larger than a gate-drain capacitanceCgd of switchable cells 101 located further away from the gatemetallization 305, e.g. switchable cells 101 located in the main orfirst switchable region 100, for example by locally adapting thespecific coverage ratio. For example, the cell layout can be differentin different regions, for example in a first switchable region and asecond switchable region, of the active area 10. This results in adifferent specific coverage ratio for the switchable cells 101 in theseregions. Typically, the specific coverage ratio of switchable cells 101in a switchable region which is disposed closer to the gatemetallization 305 is larger than the specific coverage ratio ofswitchable cells 101 in a switchable region which is arranged furtheraway from the gate metallization 305.

According to an embodiment, the gate electrode structure can includehighly doped polysilicon. Moreover, the gate metallization 305 caninclude at least one of a metal, a metal alloy, and a metal layer stack.According to yet a further modification, the gate metallization 305 canhave a higher specific conductivity than the gate electrode structure.

Switchable cells 101 located near the gate metallization 305 can beprovided with large gate polysilicon coverage. In these switchable cells101, due to a larger overlap area between the gate-polysilicon (gateelectrode structure) and a drain or drift area, the local gate-draincapacitance Cgd is increased near the gate metallization 305 or the edgetermination region 600. Alternatively or in addition to that, switchablecells 101 located more centrally can be provided with a smaller gatepolysilicon coverage in order to provide lower gate-drain capacitanceCgd. The higher gate-drain capacitance Cgd of the switchable cells 101located near the edge termination region 600 results in a localslow-down of these switchable cells 101, whereas faster switching can beprovided in the more central part of the active area 10 where switchablecells 101 with a reduced gate-drain capacitance Cgd are arranged. Thisat least partially compensates the inhomogeneous gate signaldistribution and provides for a more even switching of the device.

FIG. 2 illustrates a semiconductor switching device 300 a having a firstswitchable region 100 and a second switchable region 200 arrangedbetween the first switchable region 100 and the edge termination region600, according to another embodiment. The first switchable region 100includes a plurality of first switchable cells 101, and the secondswitchable region 200 includes a plurality of second switchable cells202. The second switchable region 200 can at least partially surroundthe first switchable region 100 as illustrated in FIG. 2.

As shown in FIG. 2, the second switchable region 200 is arranged near oradjacent to the edge termination region 600. The second switchable cells202 are provided with a higher gate-drain capacitance than the firstswitchable cells 101 in the first switchable region 100. Although thesecond switchable cells 202 receive a switching signal before it isfully distributed to the first switchable cells 101, the increasedgate-drain capacitance of the second switchable cells 202 retards theswitching of the second switchable cells 202 relative to the firstswitchable cells 101 so that both the first and the second switchablecells 101, 202 switch approximately at the same time.

The first switchable region 100 can have a first specific coverage ratiowhich is different to a second specific coverage ratio of the secondswitchable region 200. For example, the second specific coverage ratiocan be larger than the first specific coverage ratio.

A switchable cell 101, 202 has a given layout and can be defined by asingle continuous source region when viewed onto the semiconductorsubstrate. The size of the switchable cells 101, 202 can vary in theactive area 10. According to an embodiment, the active area 10 caninclude switchable cells 101, 202 of different size and/or layout. Anexample is the so-called strip layout where the source regions have theshape of long strips. As the strips can be comparably long and can evenextend from a first side of the edge termination area 600 to a secondside of the edge termination area 600 opposite the first side whenviewed onto the semiconductor substrate, a single switchable cell 101,202 can extend from the first switchable region 100 to the secondswitchable region 200. In this case, one portion of the switchable cellforms part of the first switchable region 100 while another portion ofthe switchable cell forms part of the second switchable region 200. Sucha switchable cell 101 will than have portions with different thresholdvoltages. Hence, the boundary between the first and second switchableregions 100, 200 do not need to correlate to the location and boundaryof individual switchable cells 101, 202.

In further embodiments, an individual switchable cell completely formspart either of the first switchable region 100 or of the secondswitchable region 200, or even a third switchable region if threedifferent switchable regions are formed. In this case, each switchablecell has a given specific gate-drain capacitance and all switchablecells of a given switchable region has the same specific gate-draincapacitance with the specific gate-drain capacitance of the switchablecells of different switchable regions being different from each other.

FIG. 3 illustrates a semiconductor switching device 300 b provided on asemiconductor substrate 30 with a modified gate metallization 305 b,according to yet another embodiment which can be combined with otherembodiments described herein. As shown in FIG. 3, the gate metallization305 b of the semiconductor switching device 300 includes, in addition tothe gate metallization 305 shown in FIG. 1, gate fingers 303. The gatemetallization 305 b includes the gate ring 304, the gate pad 302, andthe gate fingers 303. Two gate fingers 303 are shown in FIG. 3. Thenumber of the gate fingers 303 is not restricted to two and can bethree, four, five, or even more. The gate fingers 303 transfer theswitching signal more efficiently into the main switchable region 100.The gate signal emitter formed by the gate metallization 305 b extendscloser to main switchable cells 101 as compared to the arrangement shownin FIG. 1.

FIG. 4 is a schematic drawing of the semiconductor switching device 300c having an additional second switchable region 200 which is providedclose to the gate metallization 305 b. Since the gate metallization 305b includes gate fingers 303 extending deeply into the active area 10,the second switchable region 200 also extends deeply in the active area10 and surrounds the gate fingers 303. As best illustrated in FIG. 4,the second switchable region 200 is arranged between the firstswitchable region 100 and the gate metallization 305 also in the regionswhere the gate fingers 303 are formed since the switchable cells 202arranged closer to the gate fingers 303, i.e. which have a smallerdistance to the gate fingers 303, would also “see” the gate voltageearlier than switchable cells 101 arranged in a greater distance to thegate fingers 303.

According to embodiments which can be combined with other embodimentsdescribed herein, a ratio of the area of the second switchable region200 to the area of the first switchable region 100 can be in a rangefrom 10% to 50%, particularly in a range from 20% to 40%, andspecifically can amount to approximately 30%.

As described above, physical properties of the second switchable cells202 are adapted to be different from physical properties of the firstswitchable cells 101 to adapt the switching behavior for partiallycompensating of the inhomogeneous gate signal distribution in the activearea 10. The adapted physical property can be, for example, thegate-drain capacitance Cgd of the respective switchable cells 101, 202.

As explained further below, the number switchable regions with differentgate-drain capacitance Cgd can be larger than two. This allows for abetter local “approximation” of the specific gate-drain capacitance toimprove the gate voltage signal distribution, so that the number ofcells which become conductive at the same time or within a very shortduration increases.

According to an embodiment, the number of switchable regions 100, 200can be increased to adapt it to the expected critical profile, whichdepends on the signal distribution properties of the technology such aslayout geometry and gate material resistance.

The effect of a locally varying gate-drain capacitance is schematicallyillustrated in FIG. 12. For ease of explanation, only two switchablecells representative for the first and second switchable region 100, 200are illustrated. The second switchable cell has the gate-draincapacitance C2 and the first switchable cell has a gate-draincapacitance C1. U0 represent the voltage applied to the gatemetallization. Assume that C2 is equal to C1, and R1 is equal to R2.Then C2 is charged faster than C1. The voltage U1 across C1 is smallerthan U2 as it holds: U1=U2−i1*R1.

When C1 would be much larger than C2, the charging of C1 is retarded andthe voltage U1 across C1 would be low for a longer time. This means thatthe gate voltage for the second switchable cell in the second switchableregion 200 is low and thus this switchable cell is not renderedconductive.

When C2 would be much larger than C1, the charging of C2 is retarded.However, the charging of C1 would also be slower as U1 cannot be largerthan U2. On the other hand, the voltage U1 across C1 having a much lowercapacitance than C2 would be more closer to U2 in comparison to the casewhere C1 would be much larger than C2.

Hence, by making C2 larger than C1, the voltages U1 and U2 have a moresimilar voltage rise than in the case when C1 is equal C2.

It is noted that the effective gate resistance for the first switchablecell is R1+R2, while the effective gate resistance for the secondswitchable cell is R2. Typically, R1 is equal to R2. In embodimentsdescribed herein, R2 can be lower than R1. For example, by locallyvarying the cell layout, particularly the layout of the gate electrodestructure, R2 and R1 can be adapted. The variation of the cell layoutcan also be used to adapt the gate-drain capacitance. Additionally, foroptionally varying the threshold voltage, typically the dopingconcentration of the body regions of the cells is locally adapted.

According to an embodiment, the total gate-drain capacitance of thedevice remains unchanged to keep the electrical properties of the wholedevice constant. Based on the total gate-drain capacitance of the deviceand the number of cells, one can define a mean gate-drain capacitanceCgd0 per cell. The gate drain capacitance Cgd1 of each first switchablecell 101 can thus be reduced in comparison to the mean gate-draincapacitance Cgd0 while the gate-drain capacitance Cgd2 of the secondswitchable cells 202 can be increased in comparison with the meangate-drain capacitance Cgd0. Since the gate drain capacitance alsoinfluences the switching speed of a switchable cell, the firstswitchable cells 101 are adapted to switch faster than the secondswitchable cells 202. This at least partially counteracts the retardeddistribution of the gate signal into the active area 10.

According to yet another embodiment which can be combined withembodiments described herein, the active area 10 can be subdivided intoa number of n sub-regions 200 of switchable cells, wherein a sub-regionof switchable cells located closer to the gate metallization 305, 305 bis adjacent to and at least partially surrounds another sub-region ofswitchable cells located further away from the gate metallization 305,305 b. Herein, switchable cells located closer to the gate metallization305, 305 b can have a gate-drain capacitance Cgd larger than agate-drain capacitance Cgd of switchable cells located further away fromthe gate metallization 305, 305 b.

According to an alternative modification thereof, the number n ofsub-regions of switchable cells can be, for example, in a range from n=1to n=7.

According to an embodiment, the second switchable region 200 can form anouter ring region of the active area 10. Furthermore, multipleswitchable regions forming ring structures can also be provided.

Alternatively, the gate metallization can be arranged in a centralposition of the semiconductor device disposed from the outer rim. Inthis case, the second switchable region can surround, at leastpartially, the central gate metallization, and the first switchableregion can surround, at least partially, the second switchable region,wherein the second switchable region has a higher specific gate-draincapacitance than the first switchable region.

Detailed structures of switchable cells and a process for manufacturingsemiconductor devices are described below with reference to FIG. 5 toFIG. 8.

A method of manufacturing a semiconductor switching device 300 can beillustrated with respect to the cell layout depicted in FIG. 5 to FIG.8. The method includes providing a semiconductor substrate 300 having anouter rim 604, an active area 10, and an edge termination region 600arranged between the active area 10 and the outer rim 604. A pluralityof switchable cells 101 is formed in the active area 10, wherein each ofthe switchable cells 101 includes a gate electrode structure and asource region. A source metallization is formed in ohmic contact withthe source regions of the switchable cells 101.

Furthermore, a gate metallization 305 is formed in ohmic contact withthe gate electrode structures of the switchable cells 101 such that acoverage ratio between the gate electrode structures of the switchablecells 101 and the semiconductor substrate of switchable cells 101located closer to the gate metallization 305 is larger than the coverageratio of switchable cells 101 located further away from the gatemetallization 305.

FIG. 5 illustrates a cell structure provided in an outer sub-region ofthe active area 10 which can form, for example, a third switchableregion 250. The edge termination region 600 at least partially surroundsthe third switchable region 250 of the active area 10. The thirdswitchable region 250 includes third switchable cells 252. The edgetermination region 600 includes inactive cells 203. Furthermore, alongitudinal pitch 603 of a cell arrangement of the third switchablecells 252 in third switchable region 250 of the active area is depicted.

FIG. 6 illustrates the cell structure in a transition region from thesecond switchable region 200 to the first or main switchable region 100which are provided in the active switchable region 500.

As can be seen in FIGS. 5 and 6, the cell layout of the cell locallyvaries. For example, the longitudinal pitch 603 of the cells in thethird switchable region 250 can be smaller than the longitudinal pitch603 in the second switchable region 200. The cell layout of the cells inthe second and third switchable region 200, 250 can be referred to a baror strip layout since the source contacts 317 have the shape of bars orstrips. Each source contact 317 lands on a single source region. Thecells in the second switchable region 200 have longer source contacts317 and longer source regions than the cells in the third switchableregion 250.

The source contacts 317 of the second cell area 200 and the third cellarea 250 have a bar layout of different length. Therefore, this celllayout is often called “bar poly.” As shown in FIGS. 5 and 6, the lengthof the source contacts 317 differs between the second to the thirdswitchable region 200, 250. The space between the bars—in theirlongitudinal extension—is covered by portions of the gate electrodestructure 315 which therefore is larger in the third switchable region250 in comparison with the gate electrode structure 315 of the secondswitchable region 200, which in turn has a larger gate electrodestructure 315 than the first switchable region 100.

The layout of the cells in first switchable region 100 can be describedas a strip layout as only one continuous source region is formed pervertical line. Since the source contacts 317 form long strips and aretypically formed by polysilicon plugs, this cell layout is also called“strip poly.”

The adaptation of the cell layout can also influence the channel widthof switchable cell.

The area where the additional portions of the gate electrode 315 areformed is indicated by region 340. In regions 340, adjacent bars of thegate poly are connected to increase the coverage ratio of the gateelectrode structure 315 relative to the area of the cells.

According to an embodiment, the longitudinal pitch of the cells isvaried to reduce the channel width and the resistance of the gateelectrode structure 315 in regions close to the gate metallization 305.Due to the increasing coverage of the gate electrode structure 315closer to the gate metallization 305, the electrical resistance of thegate electrode structure 315 is also locally reduced which improvesdistribution of the gate signal. For example, the gate electrodestructure 315 of the second switchable region 200 can have a lowerspecific resistance than the gate electrode structure 315 of the firstswitchable region 100.

FIG. 7 is another detailed illustration of second switchable cells 202provided in the second switchable region 200 of the active switchableregion 500. As can be seen in FIG. 7, the second switchable cells 202have a specific longitudinal pitch such that channel width and/or gatepoly resistance of cells near chip edge is reduced. Thereby, transistorcells located near the chip edge are provided with a slower switchingbehavior as compared to transistor cells located in the chip center,i.e. located further away from the chip edge. In other words, a fasteror more aggressive switching is provided in the chip center or closer tothe chip center.

FIG. 8 is for illustration of a bridges 450 used for varying physicalproperties of the second switchable cells 202 in the second switchableregion 200 of the active switchable region 500, during manufacturing ofthe semiconductor switching device. The bridges 450 illustrated in FIG.8 can be arranged in the region of the second switchable cells 202,specifically over areas where a high polysilicon coverage is desired.High polysilicon coverage at specified areas near the chip edge, e.g. inthe second switchable region 200, can result in the desired effect, i.e.a faster deep signal penetration into the chip center. The gate-draincapacitance of switchable cells can be adjusted by an appropriate choiceof the layout of the gate electrode structure applied during the chipmanufacturing process. A large polysilicon coverage provides a highlocal gate-drain capacitance. Furthermore, increasing the number ofbridges 450 and their local density also influences the localpolysilicon coverage and thus allows local adaptation of the specificdistributed resistance of gate electrode structure.

Furthermore, the size of the bridges 450, 451 also influences the localresistance of the gate electrode structure. As illustrated in FIG. 8,the polysilicon bridges 450 between the second switchable cells 202 inthe second switchable region 200 are wider than the polysilicon bridges451 between the first switchable cells 101 in the first switchableregion 100. This results in a decreased specific resistance of the gateelectrode structure in the second switchable region 200 in comparison tothe specific resistance of the gate electrode structure in the firstswitchable region 100 which improves faster gate signal penetration intothe first switchable region 100.

According to an embodiment, the gate electrode structure in the secondswitchable region 200 has a specific ohmic resistance which is higherthan the specific ohmic resistance of the gate electrode structure inthe first switchable region 100.

According to an embodiment the method of manufacturing a semiconductorswitching device can include providing a semiconductor substrateincluding an outer rim, an active area, and an edge termination regionarranged between the active area and the outer rim, forming a pluralityof switchable cells in the active area, wherein each of the switchablecells includes a gate electrode structure and a source region,depositing a source metallization in ohmic contact with the sourceregions of the switchable cells, and depositing a gate metallization inohmic contact with the gate electrode structures of the switchable cellssuch that a coverage ratio between the gate electrode structures and thesemiconductor substrate of switchable cells located closer to the gatemetallization is higher than the coverage ratio of switchable cellslocated further away from the gate metallization.

According to embodiments which can be combined with other embodimentsdescribed herein, the gate metallization can include a gate electrodestructure such as an electrically conductive structure selected from thegroup consisting of a gate runner structure, a gate pad, a gate ring, agate finger, or any combinations thereof. In particular, the pluralityof switchable cells can include a transistor selected from the groupconsisting of a MOSFET, a MISFET, an IGBT, a SJFET (Superjunction FET),and any combinations thereof. A SJFET is a compensation device.

FIG. 9A is a cross-sectional view of a portion of a semiconductor device300, wherein two adjacent switchable cells are illustrated.

The semiconductor substrate 301 has a first, upper side 310 and asecond, lower side 309. At the second side 309 a drain region 307 isformed which is electrically connected to a drain metallization 308. Afirst pn-junction 314 is formed between a drift region 306 and a bodyregion 312. A gate electrode structure 315 includes the gate electrodesand forms a gate-source capacitance Cgs and a gate-drain capacitanceCgd. The body region 312 and a source region 313 are electricallyconnected by source contacts 317 with a source metallization 319 and aretherefore at source potential in this embodiment. An area of thegate-source capacitance Cgs assumes the laterally outer portions of thegate electrode 315, e.g. the area where the gate electrode structure 315overlaps the source regions 313 and the field-free portions of the bodyregions 312, in which no space-charge region is formed. The field-freeportions of the body regions 312 and the source regions 313 form thecounter electrode of the gate-source-capacitance Cgs.

On the other hand, the central portion of the gate electrode structure315 forms the gate-drain capacitance Cgd. The counter electrode isformed here by the field-free portions of the drift region 306, e.g. theportions of the drift region 306 which are below the space-chargeregion. The “capacitor dielectric layer” of the gate-drain capacitanceCgd is formed by a dielectric layer 318 and the space-charge region.

To provide a good ohmic contact between the source contacts 317 and thebody regions 312, respective body contact regions 312 a are formed whichhave a higher doping concentration than the doping concentration of thebody regions 312.

As shown in FIG. 9A, the gate-drain capacitance Cgd can be dependent onthe specific coverage ratio between the area of the gate electrodestructure 315 and the area of the semiconductor substrate. It is notedhere that the active area can include both the area of the firstswitchable region 100 and the area of the second switchable region (see,e.g. FIGS. 2 and 4). Herein, the specific coverage ratio of the gateelectrode structure 315 can be higher in regions of the active areawhich are located closer to the gate metallization than in regions ofthe active area which are located further away from the gatemetallization.

This is schematically illustrated in FIG. 9B which shows a cross-sectionthrough a semiconductor device according to an embodiment. FIG. 9B showsthe active area with the first switchable region 100, which is thecentral switchable region of the active area, and the second switchableregion 200 of the active area formed by the first and second switchableregion 100, 200. The second switchable region 200 surrounds the firstswitchable region 100.

As can be seen in FIG. 9B, the gate electrode structure 315 extends fromthe first switchable region 100 to the edge termination region 600. Thegate metallization 305, specifically a gate ring, is formed in the edgetermination region 600 on and in contact with the gate electrodestructure 315. Additional gate fingers can also be formed in contactwith the gate electrode structure 315 to extend from the gate ring 305into the second switchable region 200.

The longitudinal pitch of the switchable cells in the first and secondswitchable region 100, 200 is indicated by the arrows marked with d1 andd2, respectively. Arrow L indicates the length of a “unit region” whichis used here to explain the variation of the specific coverage ratio.For sake of ease of explanation, FIG. 9B only illustrates the bodyregions.

As can be seen in FIG. 9B, the gate electrode structure 315 covers alarger portion in the second cell area 200 than in the first cell area100. More specifically, the coverage ratio between the gate electrodestructure 315 and the drift region 306 is larger in the secondswitchable region 200 than in the first switchable region 100. Thislocally increases the gate-drain capacitance Cgd in the secondswitchable region 200 in comparison to the first switchable region 100.

The regions covered by the gate electrode structures and arrangedbetween adjacent body regions 312 is marked by circles 330. As shown inFIG. 9B, due to the shorter cell pitch d1, the number of covered regions330 is larger in the second switchable region 200 per unit region L thanin the first switchable region 100.

The cell layout is not limited to the geometry illustrated in FIGS. 9Aand 9B which show vertical devices with planar gates. The switchablecells can also be trench cells. Alternatively, the switchable cells canalso be planar devices having their source regions 313 and drain regions307 at the first side 310. The local cell layout of the switchable cellscan thus be adapted also for trench cells and planar cells to locallyincrease the gate-drain capacitance and/or the resistance of the gateelectrode structure 315 in areas close to the gate signal emitters.

According to embodiments which can be combined with other embodimentsdescribed herein, a semiconductor device 300 can include a semiconductorsubstrate 301 including an outer rim 604, an active area, and an edgetermination region 600 arranged between the active area and the outerrim 604, a plurality of switchable cells arranged in the active area,wherein each of the switchable cells includes a gate electrode structure315 and a source region 313, a source metallization 319 in ohmic contactwith the source regions 313 of the switchable cells, and a gatemetallization in ohmic contact with the gate electrode structures 315 ofthe switchable cells, wherein the gate electrode structure 315 ofswitchable cells which are arranged closer to the gate metallization hasa cell layout which is different to a cell layout of the gate electrodestructure 315 of switchable cells which are arranged further away fromthe gate metallization.

FIG. 10 illustrates a semiconductor switching device 300 d having afirst switchable region 100 and a second switchable region 200 arrangedbetween the first switchable region 100 and the edge termination region600, according to another embodiment which can be combined with otherembodiments described herein. Specifically, the active area 10 caninclude the first switchable region 100 having first switchable cells101 and the second switchable region 200 having second switchable cells202, wherein the second switchable region 200 at least partiallysurrounds the first switchable region 100. The first switchable region100, or the main switchable region, includes main or first switchablecells 101, whereas is the second switchable region 200 includessub-region cells 202, or second cells.

As illustrated in FIG. 10, the second switchable region 200 is arrangednear or adjacent to the edge termination region 600. As the gatemetallization 305 formed, e.g. by the gate ring 304 and the gate pad302, is arranged within in the edge termination region 600, switchablecells 202 arranged in the second switchable region 200 can receiveswitching signals in a shorter time period than the first switchablecells 101 located in the main switchable region 100. A physicaldimension of the semiconductor substrate can be defined by a substratelength 601 and by a substrate width 602. The substrate length can be ina range from 2 mm to 15 mm, and typically amounts to approximately 10mm. The substrate width can be in a range from 2 mm to 10 mm, andtypically amounts to approximately 7 mm. The second switchable region100 can have a width along a direction from the edge termination region600 to the first switchable region 100 of up to several hundreds μm.

FIG. 11 illustrates a semiconductor switching device 300 e having afirst switchable region 100 and more than one second switchable region200 a, 200 b arranged between the first cell 100 region and an edgetermination region 600, according to yet another embodiment which can becombined with embodiments described herein.

In the arrangement shown in FIG. 11, the first (inner or main)switchable region 100 of the active area 10 can include switchable cells101 having a first specific gate-drain capacitance. According to anembodiment, at least four switchable regions 100, 200 a, 200 b, 200 ccan be provided. Herein, the second switchable region 200 a of theactive area 10 at least partially surrounds the first switchable region100 and can include switchable cells 202 a having a second specificgate-drain capacitance. The third switchable region 200 b of the activearea 10 at least partially surrounds the second switchable region 200 aand can include switchable cells 202 b having a third specificgate-drain capacitance. Furthermore, the fourth switchable region 200 cof the active area 10 at least partially surrounds the third switchableregion 200 b and can include switchable cells 202 c having a fourthspecific gate-drain capacitance. The fourth specific gate-draincapacitance is the highest gate-drain capacitance while the firstspecific gate-drain capacitance is the lowest gate-drain capacitance,with the second and third specific gate-drain capacitance being betweenthe first and the fourth specific gate-drain capacitance to obtain astep-wise reduction of the specific gate-drain capacitance from thefourth switchable region 202 c to the first switchable region 100.

For optionally varying the threshold voltage, an additional implantationstep or steps can be performed. For example, the body implantation canbe carried out globally, e.g. for the first and the second switchableregion 100, 200, while an additional p-implantation is carried out forthe second switchable region 200 only. For the additionalp-implantation, an extra mask can be used which covers the firstswitchable region 100.

For varying the specific coverage ratio of the gate electrode structureto adapt locally the gate drain capacitance, the mask for structuringthe gate poly is locally adapted to form bridges in the regions 340. Inaddition to that, the implantation masks for forming the source regionsand the body regions can also locally be adapted.

The active area 10 can include a first switchable region 100 of firstswitchable cells 101, each first switchable cell 101 having a firstspecific coverage ratio, and a second switchable region 200 a of secondswitchable cells 202 a, each second switchable cell 202 a having asecond specific coverage ratio, and a at least a third switchable region200 b of third switchable cells 202 b, each third switchable cell 202 bhaving a third specific coverage ratio, wherein the third specificcoverage ratio is larger than the second specific coverage ratio, thesecond specific coverage ratio is larger than the first specificcoverage ratio, and the second switchable region 200 a is arrangedbetween the first switchable region 100 and the third switchable region200 c.

In view of the above, a semiconductor device includes, according to anembodiment which can be combined with other embodiments describedherein, a semiconductor substrate having an outer rim, an active area,and an edge termination region arranged between the active area and theouter rim. A plurality of switchable cells is arranged in the activearea, wherein each of the switchable cells includes a gate electrodestructure and a source region. A source metallization is in ohmiccontact with the source regions of the switchable cells, and a gatemetallization is in ohmic contact with the gate electrode structures ofthe switchable cells. The active area is subdivided into a number of nsub-regions of switchable cells, wherein a sub-region of switchablecells located closer to the gate metallization is adjacent to and atleast partially surrounds another sub-region of switchable cells locatedfurther away from the gate metallization, wherein switchable cellslocated closer to the gate metallization have a gate-drain capacitancelarger than a gate-drain capacitance of switchable cells located furtheraway from the gate metallization.

In view of the above, a semiconductor device includes a semiconductorsubstrate having an outer rim, an active area, and an edge terminationregion arranged between the active area and the outer rim. A pluralityof switchable cells is arranged in the active area, wherein each of theswitchable cells has a given area and includes a gate electrodestructure, which partially covers the switchable cell, and a sourceregion. A source metallization is in ohmic contact with the sourceregions of the switchable cells. A gate metallization is in ohmiccontact with the gate electrode structures of the switchable cells. Acoverage ratio is defined between the gate electrode structure and thearea of the switchable cell for each switchable cell, wherein thecoverage ratio of switchable cells located closer to the gatemetallization is larger than the coverage ratio of switchable cellslocated further away from the gate metallization.

According to an embodiment, the active area includes a first switchableregion of first switchable cells, each first switchable cell having afirst coverage ratio, and at least a second switchable region of secondswitchable cells, each second switchable cell having a second coverageratio, wherein the second coverage ratio is larger than the firstcoverage ratio, and wherein the second switchable region is arrangedbetween the first switchable region and the gate metallization.

Spatially relative terms such as “under,” “below,” “lower,” “over,”“upper” and the like, are used for ease of description to explain thepositioning of one element relative to a second element. These terms areintended to encompass different orientations of the device in additionto different orientations than those depicted in the Figures. Further,terms such as “first”, “second”, and the like, are also used to describevarious elements, regions, sections, etc. and are also not intended tobe limiting. Like terms refer to like elements throughout thedescription.

As used herein, the terms “having,” “containing,” “including,”“comprising” and the like are open ended terms that indicate thepresence of stated elements or features, but do not preclude additionalelements or features. The articles “a,” “an” and “the” are intended toinclude the plural as well as the singular, unless the context clearlyindicates otherwise.

With the above range of variations and applications in mind, it shouldbe understood that the present invention is not limited by the foregoingdescription, nor is it limited by the accompanying drawings. Instead,the present invention is limited only by the following claims and theirlegal equivalents.

The written description above uses specific embodiments to disclose theinvention, including the best mode, and also to enable any personskilled in the art to make and use the invention. While the inventionhas been described in terms of various specific embodiments, thoseskilled in the art will recognize that the invention can be practicedwith modification within the spirit and scope of the claims. Especially,mutually non-exclusive features of the embodiments described above canbe combined with each other. The patentable scope is defined by theclaims, and can include other examples that occur to those skilled inthe art. Such other examples are intended to be within the scope of theclaims if they have structural elements that do not differ from theliteral language of the claims, or if they include equivalent structuralelements with insubstantial differences from the literal languages ofthe claims.

It is to be understood that the features of the various exampleembodiments described herein can be combined with each other, unlessspecifically noted otherwise.

Although specific embodiments have been illustrated and describedherein, it will be appreciated by those of ordinary skill in the artthat a variety of alternate and/or equivalent implementations can besubstituted for the specific embodiments illustrated and describedwithout departing from the scope of the present invention. Thisapplication is intended to cover any adaptations or variations of thespecific embodiments discussed herein. Therefore, it is intended thatthis invention be limited only by the claims and the equivalentsthereof.

What is claimed is:
 1. A semiconductor device, comprising: asemiconductor substrate comprising an outer rim, a plurality ofswitchable cells defining an active area, and an edge termination regionarranged between the switchable cells defining the active area and theouter rim, wherein each of the switchable cells comprises a body region,a gate electrode structure and a source region; a source metallizationin ohmic contact with the source regions of the switchable cells; and agate metallization in ohmic contact with the gate electrode structuresof the switchable cells; wherein the active area defined by theswitchable cells comprises at least a first switchable region having aspecific gate-drain capacitance which is different to a specificgate-drain capacitance of a second switchable region.
 2. Thesemiconductor device of claim 1, wherein the second switchable region isarranged between the gate metallization and the first switchable region,wherein the second switchable region has a higher specific gate-draincapacitance than the first switchable region.
 3. The semiconductordevice of claim 1, wherein the gate-drain capacitance of switchablecells in the first and second switchable region decreases step-wise fromthe second switchable region arranged next to the gate metallization tothe first switchable region arranged in a central region of the activearea further away from the gate metallization.
 4. The semiconductordevice of claim 1, wherein the gate metallization comprises anelectrically conductive structure selected from the group consisting ofa gate runner structure, a gate pad, a gate ring, a gate finger, and anycombination thereof.
 5. The semiconductor device of claim 1, wherein theplurality of switchable cells comprises at least one transistor selectedfrom the group consisting of a MOSFET, a MISFET, an IGBT, a SJFET, andany combination thereof.
 6. The semiconductor device of claim 1, whereinthe gate electrode structure of switchable cells which are arrangedcloser to the gate metallization has a cell layout which is different toa cell layout of the gate electrode structure of switchable cells whichare arranged further away from the gate metallization.
 7. Thesemiconductor device of claim 1, wherein each switchable cell has aspecific coverage ratio defined by a ratio of the area of the gateelectrode structure of said switchable cell to the total area of saidswitchable cell, wherein the specific coverage ratio of switchable cellswhich are arranged closer to the gate metallization is larger than thespecific coverage ratio of switchable cells which are arranged furtheraway from the gate metallization.
 8. The semiconductor device of claim1, wherein the gate electrode structure comprises highly dopedpolysilicon.
 9. The semiconductor device of claim 1, wherein the gatemetallization comprises at least one of a metal, a metal alloy, and ametal layer stack.
 10. The semiconductor device of claim 1, wherein thegate metallization has a higher specific conductivity than the gateelectrode structure.
 11. The semiconductor device of claim 1, whereinthe active area defined by the switchable cells comprises a thirdswitchable region having a specific gate-drain capacitance which isdifferent to the specific gate-drain capacitance of the first switchableregion and the specific gate-drain capacitance of the second switchableregion.
 12. A semiconductor device, comprising: a semiconductorsubstrate comprising an outer rim, a plurality of switchable cellsdefining an active area, and an edge termination region arranged betweenthe switchable cells defining the active area and the outer rim, whereineach of the switchable cells comprises a body region, a gate electrodestructure and a source region; a source metallization in ohmic contactwith the source regions of the switchable cells; and a gatemetallization in ohmic contact with the gate electrode structures of theswitchable cells; wherein the active area defined by the switchablecells comprises at least a first switchable region and at least a secondswitchable region different to the first switchable region, wherein eachswitchable cell in the first switchable region and the second switchableregion has a specific coverage ratio, wherein the specific coverageratio of the switchable cells in the first switchable region isdifferent to the specific coverage ratio of the switchable cells in thesecond switchable region.
 13. The semiconductor device of claim 12,wherein the switchable cells in the first switchable region and thesecond switchable region are arranged at a given longitudinal pitch,wherein the longitudinal pitch of the switchable cells in the secondswitchable region is different to the longitudinal pitch of theswitchable cells in the first switchable region.
 14. The semiconductordevice of claim 13, wherein the longitudinal pitch of the switchablecells in the second switchable region is smaller than the longitudinalpitch of the switchable cells in the first switchable region.
 15. Thesemiconductor device of claim 12, wherein the active area defined by theswitchable cells further comprises a third switchable region, whereineach switchable cell in the third switchable region has a specificcoverage ratio, wherein the specific coverage ratio of the switchablecells in the third switchable region is different to the specificcoverage ratio of the first switchable region and the specific coverageratio of the second switchable region.
 16. The semiconductor device ofclaim 12, wherein the gate metallization comprises an electricallyconductive structure selected from the group consisting of a gate runnerstructure, a gate pad, a gate ring, a gate finger, or any combinationsthereof.
 17. The semiconductor device of claim 12, wherein, the gateelectrode structure comprises highly doped polysilicon.